Investigation of Strain Profile Optimization in Gate-All-Around Suspended Silicon Nanowire FET
نویسندگان
چکیده
In this paper, we investigate the optimization of tensile strain caused by thermal oxidation in a doubly-clamped silicon nanowire FET to enhance the mobility of its carriers. Spacer technology combined with sacrificial oxidations was used to fabricate ≈ 100 nm wide nanowires. The temperature and the duration of sacrificial wet oxidation are the main parameters that determine the induced strain. The strain in the nanowire will be measured using Raman spectroscopy at various stages during fabrication to evaluate the strain build-up throughout processes.
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